STRUCTURAL, SURFACE MORPHOLOGY, OPTICAL AND ELECTRICAL INVESTIGATION OF CdSe THIN FILMS
نویسندگان
چکیده
Cadmium Selenide (CdSe) thin films were synthesized by chemical bath deposition (CBD) method. The XRD, SEM, UV-Visible absorption spectrum, dielectric studies and photoconductivity measurements were used to characterize the CdSe films. The X-ray diffraction (XRD) is used to examine the structure of CdSe thin film. The surface morphology of the film was analyzed using Scanning Electron Microscopy (SEM) and Atomic Force Microscope (AFM).The optical properties were studied using the UV-Visible absorption spectrum. Optical constants such as band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV-Visible absorption spectrum. The dielectric studies of CdSe thin films were studied in the different frequency and different temperatures. In addition, the plasma energy of the valence electron, Penn gap or average energy gap, the Fermi energy and electronic polarizability of the CdSe thin films have been also determined. The AC electrical conductivity measurements reveal that the conduction depends on both the frequency and the temperatures. The temperature dependent conductivity study confirmed the semiconducting nature of the films. Photoconductivity measurements are carried out in order to reveal the positive photoconductivity of the CdSe Thin films.
منابع مشابه
Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملEnhanced Physical Properties Of Indium Tin Oxide Films Grown on Zinc Oxide-Coated Substrates
Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...
متن کاملInvestigations on structural and electrical properties of Cadmium Zinc Sulfide thin films
Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...
متن کاملInvestigations on structural and electrical properties of Cadmium Zinc Sulfide thin films
Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...
متن کامل